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首页> 外文期刊>Physica status solidi, B. Basic research >Theoretical study of ion doping and substrate effects in antiferroelectric thin films
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Theoretical study of ion doping and substrate effects in antiferroelectric thin films

机译：反铁电薄膜中离子掺杂和衬底效应的理论研究

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Antiferroelectric (AFE) thin films are studied under the influence of doping ions and the presence of substrates. Both induce a strong changing of the polarization and lead to a shift of the phase transition temperature. These effects can be understood within the Ising model in a transverse field with additional four spin interaction. To that aim different exchange interactions between the doping ions and the host ions as well as between the AFE thin film and the substrate are assumed. Using a Green’s function technique the microscopic spectrum of the elementary excitation is calculated. From here we find that the transition temperature and the polarization is strongly influenced by the magnitude and the kind of stress, tensile or compressive. The competition between surface and substrate effects is discussed.
机译：在掺杂离子和存在衬底的影响下研究了反铁电（AFE）薄膜。两者都引起极化的强烈变化并导致相变温度的偏移。这些效应可以在具有额外四个自旋相互作用的横向场的Ising模型中理解。为此，假定掺杂离子与主体离子之间以及AFE薄膜与基板之间存在不同的交换相互作用。使用格林函数技术，可以计算出基本激发的显微光谱。从这里我们发现，转变温度和极化受应力和大小（拉伸或压缩）的强烈影响。讨论了表面和基材效应之间的竞争。

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