The electromechanical coupling coefficient for surface acoustic waves propagating in GaN-on-sapphire structure has been evaluated using in situ measurements of the SAW attenuation during the evaporation of a metal film on the GaN surface. The extracted values for samples with GaN layer thicknesses of 2.2-2.4 mum were in the range of 0.06-0.09% at SAW frequencies of 200-300 MHz. [References: 8]
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