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首页> 外文期刊>Physica status solidi, B. Basic research >Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies
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Structures, optical properties, and electrical transport processes of SnO2 films with oxygen deficiencies

机译：缺氧SnO2薄膜的结构，光学性质和电传输过程

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摘要

The structures, optical and electrical transport properties of SnO_2 films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of SnO_2 film is strongly related to the oxygen partial pressure during deposition, which provides an effective way to tune the surface texture of SnO_2 film. All films reveal relatively high transparency in the visible range, and both the transmittance and optical band gap increase with increasing oxygen partial pressure. The temperature dependence of resisitivities was measured from 380 K down to liquid helium temperatures. At temperature above K, besides the nearest-neighbor-hopping process, thermal activation processes related to two donor levels (and 100 meV below the conduction band minimum) of oxygen vacancies are responsible for the charge transport properties. Below K, Mott variable-range hopping conduction process governs the charge transport properties at higher temperatures, while Efros-Shklovskii (ES) variable-range-hopping conduction process dominates the transport properties at lower temperatures. Distinct crossover from Mott type to ES type variable-range-hopping conduction process at several to a few tens kelvin are observed for all SnO_2 films.
机译：系统研究了在不同氧分压下通过射频溅射法制备的SnO_2薄膜的结构，光电性能。已经发现，SnO_2膜的优选生长取向与沉积期间的氧分压强烈相关，这提供了调节SnO_2膜的表面纹理的有效方法。所有薄膜在可见光范围内都显示出相对较高的透明度，并且透射率和光学带隙都随着氧分压的增加而增加。电阻率的温度依赖性是从380 K降低到液氦温度。在高于K的温度下，除了最邻近的跃迁过程外，与两个供体能级（和最小导带以下100 meV）有关的热活化过程还决定了电荷的传输性质。低于K时，Mott可变范围跳跃传导过程控制着较高温度下的电荷传输特性，而Efros-Shklovskii（ES）可变范围跳跃传导过程则主导着较低温度下的电荷传输特性。对于所有SnO_2薄膜，在几开尔至几十开尔文处观察到了从Mott型到ES型变程跳跃传导过程的明显不同。

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