Epitaxial ZnO growth and p-type doping with MOMBE

Suemune I.; Ashrafi ABMA.; Ebihara M.; Kurimoto M.; Kumano H.; Seong TY. Kim BJ.; Ok YW.

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Epitaxial ZnO growth and p-type doping with MOMBE

机译：外延ZnO的生长和MOMBE的p型掺杂

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Control of ZnO and CdO crystalline structures and p-type doping in ZnO were studied. Formation of zincblende ZnO layers as well as zincblende CdO/ZnO short-period superlattices (SPSL) are demonstrated and bright luminescence was observed even at room temperature from the CdO/ZnO SPSL. p-Type conductivity observed in N-doped ZnO is studied and the relation to the photoluminescence peaks is discussed. (C) 2004 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim. [References: 21]

机译：研究了ZnO和CdO晶体结构的控制以及ZnO中的p型掺杂。证明了闪锌矿ZnO层以及闪锌矿CdO / ZnO短周期超晶格（SPSL）的形成，甚至在室温下从CdO / ZnO SPSL观察到了明亮的发光。研究了在N掺杂的ZnO中观察到的p型电导率，并讨论了与光致发光峰的关系。（C）2004 WILEY-VCH Vertag GmbH＆Co. KGaA，Weinheim。 [参考：21]

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《Physica status solidi, B. Basic research》 |2004年第3期|共8页
作者
Suemune I.; Ashrafi ABMA.; Ebihara M.; Kurimoto M.; Kumano H.; Seong TY. Kim BJ.; Ok YW.;
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正文语种 eng
中图分类固体物理学;
关键词
Molecular-beam epitaxy; Zincblende zno; Buffer layers; Zinc-oxide; Films; Deposition; Cdo;

机译：分子束外延;Znblende zno;缓冲层;氧化锌;薄膜;沉积;Cdo;

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1. Epitaxial ZnO growth and p-type doping with MOMBE [J] . Ikuo Suemune, ABM. Almamun Ashrafi, Masato Ebihara, Physica Status Solidi. C, Conferences and critical reviews . 2004,第4期

机译：外延ZnO的生长和MOMBE的p型掺杂
2. Epitaxial growth and properties study of p-type doped ZnO:Sb by PLD [J] . Ramzi Nasser, Ji-Ming Song, Habib Elhouichet Superlattices and microstructures . 2021,第Jula期

机译：P型掺杂ZnO的外延生长和性质研究：PLD的SB
3. Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film [J] . Sahu Rajib, Gholap Hari Bhau, Mounika Gandi, Physica status solidi, B. Basic research . 2016,第3期

机译：B和N共掺杂ZnO外延薄膜中稳定的p型电导率
4. Epitaxial ZnO growth and p-type doping with MOMBE [C] . Ikuo Suemune, ABM. Almamun Ashrafi, Masato Ebihara, International Conference on II-VI Compounds . 2004

机译：外延ZnO生长和p型掺杂与mombe
5. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy. [D] . Zandian, Majid. 2003

机译：分子束外延生长外延汞碲化镉薄膜中砷的掺入和P型掺杂的研究。
6. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping [O] . Goutam Kumar Dalapati, Terence Kin Shun Wong, Yang Li, 2012

机译：利用原子层沉积的TiO2 / Al2O3栅叠层表征外延GaAs MOS电容器：Ge自掺杂和p型Zn掺杂的研究
7. Epitaxial growth of non-polar ZnO films and the related nitrogen-doping studies [O] . 王小丹 2015

机译：非极性ZnO薄膜的外延生长及相关的氮掺杂研究
8. Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range [R] . Avrutin, V., Silversmith, D., Morkoc, H. 2009

机译：ZnO掺杂不对称问题：现状与展望。实现和实现p型ZnO的实验和理论努力的回顾，适用于蓝/紫外光谱范围的发光光电器件

Epitaxial ZnO growth and p-type doping with MOMBE

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