Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

Watatani C.; Itoh T.; Hayashi H.; Shimomura S.; Hiyamizu S.; Edamatsu K.

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Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

机译：在（411）A GaAs表面上生长的GaAs / AlGaAs量子点的受限多激子态

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We have investigated the micro photoluminescence (micro-PL) spectra of a single GaAs/AlGaAs quantum dot (QD) grown on a (411)A GaAs substrate, and observed sharp luminescence lines. These luminescence lines are classified into three types in terms of their excitation-power dependence. For one of them the intensity increases linearly with excitation power density, and the others that appear at the lower and higher energy sides of the linear one exhibit superlinear dependence. The difference in the excitation-power dependence reflects the number of excitons created in a QD, namely, the linear dependence originates from the lowest state of a confined exciton, and the others from biexcitonic and multiple exciton states. [References: 4]

机译：我们已经研究了在（411）A GaAs衬底上生长的单个GaAs / AlGaAs量子点（QD）的微光致发光（micro-PL）光谱，并观察到清晰的发光线。这些发光线根据其激发功率依赖性而分为三种。对于它们之一，强度随激励功率密度线性增加，而出现在线性能量较低和较高能量侧的其他强度则表现出超线性相关性。激发功率相关性的差异反映了在量子点中产生的激子数量，即线性相关性源自受限激子的最低态，其他依赖于双激子态和多重激子态。 [参考：4]

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《Physica status solidi, B. Basic research》 |2001年第2期|共4页
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Watatani C.; Itoh T.; Hayashi H.; Shimomura S.; Hiyamizu S.; Edamatsu K.;
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1. Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface [J] . Watatani C., Itoh T., Hayashi H., Physica status solidi, B. Basic research . 2001,第2期

机译：在（411）A GaAs表面上生长的GaAs / AlGaAs量子点的受限多激子态
2. Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411) A superflat interfaces grown by molecular beam epitaxy [J] . Takahiro Kitada, Keisuke Nii, Tetsuya Hiraoka Journal of Vacuum Science & Technology. B . 2001,第4期

机译：具有分子束外延生长的（411）A超平坦界面的拟晶InGaAs / AlGaAs量子阱中的界面突变性得到改善
3. Room temperature observation of optical modes in transferred rolled-up InGaAs/GaAs quantum dot microtube with AlGaAs confining layers [J] . Mao Guoming, Wang Qi, Chai Zhaoer, Materials science in semiconductor processing . 2018,第期

机译：用Algaas Conuming层转移卷起Ingaas / GaAs量子点Microtube中光学模式的室温观察
4. Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface [C] . Watatani, C., Edamatsu, . 2000

机译：在（411）A GaAs表面上生长的单个GaAs / AlGaAs量子点的微光致发光
5. Photoluminescence and Resonance Raman Spectroscopy of MOCVD Grown GaAs/AlGaAs Core-Shell Nanowires. [D] . Leaffer, Oren D. 2013

机译：MOCVD生长的GaAs / AlGaAs核壳纳米线的光致发光和共振拉曼光谱。
6. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates [O] . M Shafi, RH Mari, A Khatab, 2010

机译：在（100）和（311）B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
7. Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas [O] . H. Khmissi, A. M. El Sayed 2019

机译：错误到：量子狭窄的insumsum圆点光致发光与Algaas / GaAs二维电子气体的光致发光的温度依赖性
8. Observation of Quantum-Confined Stark Effect in Triple-Coupled InGaAs/ GaAs/AlGaAs Quantum Well Infrared Photodetector. [R] . Li, S. S., Chiang, J. C., Singh, A., 1997

机译：三重耦合InGaas / Gaas / alGaas量子阱红外光电探测器中量子限制斯塔克效应的观测。

Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

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