Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells

C. E. Norman; R. A. Hogg; A. J. Shields; N. Iizuka

首页> 外文期刊>Physica status solidi, B. Basic research >Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells

【24h】

Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells

机译：阴极发光测定GaN / AlGaN多量子阱中微裂纹处的应变引起的位移

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A series of GaN/Al_(0.65)Ga_(0.35)N multi quantum wells (MQWs) with varying QW width have been investigated. Uncapped MQWs exhibit long microcracks (#mu#-cracks) and short nano-grooves. Significant modification of the strain in the MQW is observed as it approaches a #mu#-crack, representing a change from unstrained QWs with strained barriers, to compressively-strained QWs with slightly relaxed barriers. Good agreement between experimental and calculated values of MQW emission are achieved for both strain configurations by considering only field sharing and the piezoelectric effect as a source of electric field in the QWs. The field sharing arises from a redistribution of free charge in the MQW stack as a result of equalisation of the Fermi level on both sides of the MQW.

机译：研究了一系列具有不同QW宽度的GaN / Al_（0.65）Ga_（0.35）N多量子阱（MQW）。未封盖的MQW表现出长的微裂纹（＃mu＃裂纹）和短的纳米凹槽。当MQW接近＃mu＃裂纹时，观察到应变的显着变化，表示从具有应变屏障的未应变QW变为具有稍微松弛的屏障的压缩应变QW。通过仅考虑场共享和压电效应作为QW中的电场源，两种应变配置的MQW发射的实验值和计算值之间都取得了良好的一致性。场共享是由于MQW两侧的费米能级均等化而在MQW堆栈中重新分配自由电荷而产生的。

著录项

来源
《Physica status solidi, B. Basic research》 |1999年第1期|共5页
作者
C. E. Norman; R. A. Hogg; A. J. Shields; N. Iizuka;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells [J] . C. E. Norman, R. A. Hogg, A. J. Shields, Physica status solidi, B. Basic research . 1999,第1期

机译：阴极发光测定GaN / AlGaN多量子阱中微裂纹处的应变引起的位移
2. Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells [J] . Teruhisa Kotani, Munetaka Arita, Yasuhiko Arakawa Applied Physics Letters . 2015,第11期

机译：非极性m平面AlGaN / GaN多量子阱中子带间吸收的掺杂依赖性蓝移和线宽展宽
3. Spatially-Resolved Cathodoluminescence in GaN Nanorodsand in AIGaN/GaN Multiquantum Discs Having DifferentQuantum Confinement States [J] . Young S. PARK, Hyunsik IM Journal of the Korean Physical Society . 2009,第4期

机译：GaN纳米棒中的空间分辨阴极发光和具有不同量子限制状态的AIGaN / GaN多量子盘中的空间分辨阴极发光。
4. Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates [C] . D.J.As, S.Potthast, U.Kohler, Materials Research Society Symposium . 2003

机译：在GaAs（001）基板上的MBE-种植立方AlGaN / GaN多量子孔的阴极发光
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer [O] . Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, -1

机译：使用GaN / AlGaN多量子阱有源层演示在紫外线范围内的电子束激光激发
7. Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission [O] . Pierre Ruterana, Magali Morales, Nicolas Chery, 2020

机译：AlGaN中间层对GaN / Ingan / GaN / AlGa多量子孔结构性能对红发射的影响

Cathodoluminescence Determination of Strain-Induced Shifts at Microcracks in GaN/AlGaN Multi Quantum Wells

摘要

著录项

相似文献

相关主题

期刊订阅