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首页> 外文期刊>Physica status solidi, B. Basic research >Semi-insulating behavior of InP wafers prepared by phosphorus vapor pressure controlled wafer annealing
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Semi-insulating behavior of InP wafers prepared by phosphorus vapor pressure controlled wafer annealing

机译：通过磷蒸气压控制晶片退火制备的InP晶片的半绝缘行为

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The semi-insulating (SI) behavior of InP wafers prepared with the phosphorus-vapor-pressure controlled annealing method has been investigated. Usually, the carrier concentrations in undoped InP wafers were decreased from the order of 10(15) to 10(14) cm(-3) after annealing, but a prominent SI property was not obtained due to insufficient native deep levels for pinning the Fermi level. Transport proper-ties of extremely low Fe doped InP wafers with Fe concentration of 1.5 x 10(15) cm(-3) were converted from conductive to semi-insulating after anneals of either at 950 C for longer than 20 h or at higher than 940 degreesC for 40 h, under the phosphorus vapor pressure of 0.1 MPa. The compensation mechanism by Shockley will explain not only the electrical activation of Fe after annealing, but also the decrease of shallow donors which are related to native defects such as phosphorus vacancies. In this paper, effective annealing conditions for realizing the reproducible production of extremely low Fe doped SI InP have been investigated systematically. Further-more, a compensation mechanism will also be proposed in connection with it. [References: 34]
机译：研究了用磷蒸汽压控制退火方法制备的InP晶片的半绝缘（SI）行为。通常，未掺杂的InP晶片中的载流子浓度在退火后从10（15）降低到10（14）cm（-3），但是由于没有足够的自然深层来固定费米，因此无法获得显着的SI特性。水平。在950°C退火20 h或更高的退火温度后，Fe浓度为1.5 x 10（15）cm（-3）的极低Fe掺杂InP晶片的传输特性从导电转变为半绝缘在磷蒸汽压力为0.1 MPa的情况下，在940摄氏度下放置40小时。 Shockley的补偿机制不仅可以解释退火后Fe的电活化，还可以解释与天然缺陷（如磷空位）有关的浅施主的减少。本文系统地研究了有效的退火条件，以实现可重复生产极低Fe掺杂的SI InP。此外，还将提出一种补偿机制。 [参考：34]

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