Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

Indlekofer KM.; Dona E.; Malindretos J.; Bertelli M.; Kocan M.; Rizzi A. Luth H.

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Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

机译：极化电荷诱导的基于AlN / GaN的共振隧穿结构的I-V特性的不对称建模

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Numerical simulations of AlN/GaN-based resonant tunnelling diode structures are presented, employing self-consistent real-time Green's functions. The simulated current-voltage characteristics show strong asymmetry effects due to polarization charges at the heterointerfaces in the double-barrier region. [References: 2]

机译：提出了基于AlN / GaN的共振隧穿二极管结构的数值模拟，并采用了自洽的实时格林函数。由于双势垒区域中异质界面处的极化电荷，模拟的电流-电压特性显示出强烈的不对称效应。 [参考：2]

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《Physica status solidi, B. Basic research》 |2002年第3期|共4页
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Indlekofer KM.; Dona E.; Malindretos J.; Bertelli M.; Kocan M.; Rizzi A. Luth H.;
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1. Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures [J] . Indlekofer KM., Dona E., Malindretos J., Physica status solidi, B. Basic research . 2002,第3期

机译：极化电荷诱导的基于AlN / GaN的共振隧穿结构的I-V特性的不对称建模
2. Modeling of the I-V characteristics of high-field stressed MOS structures using a fowler-Nordheim-type Tunneling expression [J] . E.Miranda, G.Redin, A.Faigon Microelectronics & Reliability . 2002,第6期

机译：使用Fowler-Nordheim型隧穿表达式建模高场应力MOS结构的I-V特性
3. Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization- matched AllnN/GaN heterostructures [J] . Taotao Rong, Lin-An Yang, Lin Yang, Journal of Applied Physics . 2018,第4期

机译：基于晶格匹配和极化匹配的AllnN / GaN异质结构的共振隧穿二极管的负差分电阻特性的理论研究
4. Modeling of static characteristics of resonant-tunneling structures [C] . Obukhov, I.A. . 2000

机译：共振隧道结构的静态特性建模
5. Al-Rich AlGaN/AlN-Based Double Barrier Resonant Tunneling Diodes [D] . Washiyama, Shun. 2018

机译：基于AL的ALGAN / ALN的双屏障共振隧道二极管
6. Circular polarization in a non-magnetic resonant tunneling device [O] . Lara F dos Santos, Yara Galvão Gobato, Márcio D Teodoro, 2011

机译：非磁性共振隧穿装置中的圆极化
7. Modeling of voltammetric characteristic for tunneling-resonant structureudbased on AlGaAs/GaAs semiconductor. [O] . Будник Т. 2014

机译：隧道共振结构的伏安特性建模 ud基于AlGaAs / GaAs半导体。
8. Theoretical analysis of spin polarization effects in InAs/GaSb/AlSb resonant tunneling structures [R] . Ting, D. Z. -Y., Cartoixa-Soler, X., McFill, T. C., 2001

机译：Inas / Gasb / alsb共振隧穿结构中自旋极化效应的理论分析

Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

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