The electrophysical properties of the surface layer of the semiconductor TlBiSe2

Anagnostopoulos A.; Bogevolnov VB.; Ivankiv IM.; Shevchenko OY. Perepelkin AD.; Yafyasov AM.

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The electrophysical properties of the surface layer of the semiconductor TlBiSe2

机译：半导体TlBiSe2的表面层的电物理性质

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The field effect method in electrolytes is used for finding the electrophysical characteristics of the surface and the band parameters in the surface layers of the semiconductor TlBiSe2. In this paper the dispersion law and the effective mass of electrons of a conduction band, the concentration of ionized donor impurities, and the energy position of the Fermi level are defined. The experimental and theoretically calculated C(V) characteristics are compared. [References: 12]

机译：电解质中的场效应方法用于寻找表面的电物理特性和半导体TlBiSe2的表面层中的能带参数。在本文中，定义了色散定律和导带电子的有效质量，电离给体杂质的浓度以及费米能级的能量位置。比较了实验和理论计算的C（V）特性。 [参考：12]

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《Physica status solidi, B. Basic research》 |2002年第2期|共6页
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Anagnostopoulos A.; Bogevolnov VB.; Ivankiv IM.; Shevchenko OY. Perepelkin AD.; Yafyasov AM.;
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中图分类固体物理学;
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1. The electrophysical properties of the surface layer of the semiconductor TlBiSe2 [J] . Anagnostopoulos A., Bogevolnov VB., Ivankiv IM., Physica status solidi, B. Basic research . 2002,第2期

机译：半导体TlBiSe2的表面层的电物理性质
2. PHYSICS OF SEMICONDUCTORS AND DIELECTRICS AN INVESTIGATION INTO THE EFFECT OF HIGH-POWER PULSE IR RADIATION ON THE PROPERTIES OF SURFACES OF CdxHg1-хTe HETEROEPITAXIAL LAYERS [J] . K. O. Boltar, I. D. Burlakov, А. V. Voitsekhovskii, Russian physics journal . 2013,第8期

机译：半导体和介电物理研究高功率脉冲红外辐射对CdxHg1-хTe异质外延层表面性能的影响
3. Surface morphology and electrical properties of Au/Ni/〈C〉-Ga _2O _3/p-GaSe〈KNO _3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions [J] . Bakhtinov A.P., Vodopyanov V.N., Netyaga V.V., Semiconductors . 2012,第3期

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4. Surface-active and electrophysical semiconductors properties of the CdTe-CdSe system [C] . I A Kirovskaya, T L Bukashkina, R V Ekkert, International Scientific and Technical Conference "Applied Mechanics and Dynamics Systems" . 2017

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5. Formation of aminosilane and thiol monolayers on semiconductor surfaces and bulk wet etching of III--V semiconductors. [D] . Jain, Rahul. 2012

机译：在半导体表面上形成氨基硅烷和硫醇单层，并对III-V半导体进行本体湿法蚀刻。
6. Modulating Surface Morphology Related to Crystallization Speed of Perovskite Grain and Semiconductor Properties of Optical Absorber Layer under Controlled Doping of Potassium Ions for Solar Cells [O] . Tao Ling, Xiaoping Zou, Jin Cheng, 2018

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7. Electrophysical characteristics of the near-surface layer of semiconductor ceramics for ZnO varistors [O] . R. I. Lavrov, V. R. Kolbunov, V. F. Bashev 2018

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8. Electronic Surface Properties of III-V Semiconductors: Excitonic Effects, Band-Bending Effects and Interactions with Au and O Adsorbate Layers. [R] . Gudat, W., Eastman, D. E. 1976

机译：III-V半导体的电子表面特性：激子效应，带弯曲效应以及与au和O吸附层的相互作用。

The electrophysical properties of the surface layer of the semiconductor TlBiSe2

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