Band filling and thermal escape in CdTe/ZnTe quantum dots grown by molecular beam epitaxy

Godo K.; Makino H.; Takai T.; Chang JH.; Yao T.; Sasao T.; Goto T.

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Band filling and thermal escape in CdTe/ZnTe quantum dots grown by molecular beam epitaxy

机译：分子束外延生长的CdTe / ZnTe量子点的能带填充和热逃逸

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We have investigated the effects of band filling and thermal escape on the temperature dependence and excitation power dependence of photoluminescence of CdTb QDs grown by molecular beam epitaxy on ZnTe(100) substrate. The absorption spectrum indicates that the PL spectrum consists of two peaks. The experimental results of excitation power dependence were well simulated by the rate equation model taking into account the effect of band filling. The temperature dependence of PL showed significant difference for different excitation powers. It is suggested that either the wetting layer or excited states play an important role in band filling and thermal escape. [References: 7]

机译：我们已经研究了带填充和热逸出对通过分子束外延在ZnTe（100）衬底上生长的CdTb QD的光致发光的温度依赖性和激发功率依赖性的影响。吸收光谱表明PL光谱由两个峰组成。考虑到频带填充的影响，通过速率方程模型很好地模拟了励磁功率相关性的实验结果。 PL的温度依赖性对于不同的激励功率显示出显着差异。建议润湿层或激发态在带填充和热逸出中起重要作用。 [参考：7]

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《Physica status solidi, B. Basic research》 |2002年第1期|共5页
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Godo K.; Makino H.; Takai T.; Chang JH.; Yao T.; Sasao T.; Goto T.;
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1. The properties of CdTe solar cells with ZnTe/ZnTe: Cu buffer layers [J] . Song Huijin, Zheng Jiagui, Feng Lianghuan, 高技术通讯（英文版） . 2008,第001期
2. Band filling and thermal escape in CdTe/ZnTe quantum dots grown by molecular beam epitaxy [J] . Godo K., Makino H., Takai T., Physica status solidi, B. Basic research . 2002,第1期

机译：分子束外延生长的CdTe / ZnTe量子点的能带填充和热逃逸
3. Comment on 'Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy' [J. Crystal Growth 301-302 (2007) 277] [J] . Y. Gu, I.L. Kuskovsky Journal of Crystal Growth . 2008,第4期

机译：评述“金属有机分子束外延生长从Te等电子中心到II型ZnTe量子点的发光研究” [J.晶体生长301-302（2007）277]
4. Response to 'Comment on 'Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy'" [J. Crystal Growth 301-302 (2007) 277] [J] . M. Jo, I. Suemune Journal of Crystal Growth . 2008,第3期

机译：回应“关于“通过有机金属分子束外延生长从Te等电子中心到II型ZnTe量子点的发光研究”的评论” [J.晶体生长301-302（2007）277]
5. Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy [C] . M. Garcia-Rocha, I. Hernandez-Calderon, SPIE―The International Society for Optical Engineering International Symposium on Nanostructures: Physics and Technology . 2003

机译：CDTE / ZNTE超薄量子孔的光致发光研究通过脉冲梁外延生长
6. Monocrystalline ZnTe/CdTe/MgCdTe Double Heterostructure Solar Cells Grown on InSb Substrates by Molecular Beam Epitaxy. [D] . DiNezza, Michael John. 2014

机译：分子束外延在InSb衬底上生长的单晶ZnTe / CdTe / MgCdTe双异质结构太阳能电池。
7. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
8. Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy [O] . Terai Yoshikazu, Kuroda Shinji, Takita Koˆ ki, 1998

机译：分子束外延生长CdTe自组织量子点的零维激子性质

Band filling and thermal escape in CdTe/ZnTe quantum dots grown by molecular beam epitaxy

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