Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures

Jogai B

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Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures

机译：AlGaN / GaN / InGaN异质结结构的复介电功能

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Theoretical calculations of the complex dielectric function of AlGaN/GaN heterojunction field-effect transistor (HFETs) structures and InGaN/GaN single quantum wells (SQWs) are presented. The model is based on a self-consistent calculation of the band structure, taking into account the spontaneous and piezoelectric polarizations and the presence of a two-dimensional electron gas (2DEG) at the interface. The calculated results show that the large built-in electric field at the heterojunction smears out any fine structures in the dielectric function that would ordinarily be expected from transitions between the valence band edge and the confined electron states. For HFET structures, two broad features are seen in the calculated spectra, one due to the GaN layer and the other to the AlGaN barrier. There are no features due to the confined states in the 2DEG. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：提出了AlGaN / GaN异质结场效应晶体管（HFET）结构和InGaN / GaN单量子阱（SQW）的复介电函数的理论计算。该模型基于能带结构的自洽计算，其中考虑了自发极化和压电极化以及界面处存在二维电子气（2DEG）。计算结果表明，异质结处的大型内置电场会抹去通常由价带边缘和受限电子态之间的跃迁所期望的介电函数中的任何精细结构。对于HFET结构，在计算的光谱中可以看到两个主要特征，一个是由于GaN层，另一个是由于AlGaN势垒。由于2DEG中的约束状态，因此没有任何功能。（C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2004年第4期|共10页
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Jogai B;
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正文语种 eng
中图分类固体物理学;
关键词
FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; GAN; POLARIZATION; HETEROSTRUCTURES; SEMICONDUCTORS; STATES; ALN;

机译：场效应晶体管;发光二极管;光学性能;GAN;极化;异质结构;半导体;状态;ALN;

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1. Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures [J] . Jogai B Physica status solidi, B. Basic research . 2004,第4期

机译：AlGaN / GaN / InGaN异质结结构的复介电功能
2. AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta _2O _5 dielectric [J] . Lee K.H., Chang P.C., Chang S.J., The European physical journal. Applied physics . 2012,第3期

机译：基于具有Ta _2O _5介电层的InGaN / GaN MQW结构的AlGaN / GaN MOS-HFET
3. Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors [J] . K. Kumakura, T. Makimoto, N. Kobayashi, Journal of Crystal Growth . 2007,第Jan期

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4. Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GAN heterostructures using a parameteric dielectric function model [C] . J.Wagner, A.Ramakrishnanm, H.Obloh, Symposium on GaN and related alloys . 2000

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机译：用于GaN，GaN / alGaN和GaN / InGaN核壳纳米线中少数载流子扩散的无接触测量的传输成像。

Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures

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