Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T

Smirnov D; Raymond S; Studenikin S; Babinski A; Leotin J; Frings P; Potemski M; Sachrajda A

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Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T

机译：在高达73 T的磁场中通过高激发发光研究InAs / GaAs自组装量子点的电子结构

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We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-assembled quantum dots with large inter-shell spacing (75 meV) in magnetic fields up to 73 T. The PL spectra show a complex picture of levels splitting and crossings. A simple two-band single-particle model provides a good approximation to explain the observed magneto-PL spectra. (C) 2003 Elsevier B.V. All rights reserved.

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《Physica, B. Condensed Matter》 |2004年第0期|共5页
作者
Smirnov D; Raymond S; Studenikin S; Babinski A; Leotin J; Frings P; Potemski M; Sachrajda A;
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正文语种 eng
中图分类物理学;
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quantum dots; magnetic field; electronic structure; MAGNETOPHOTOLUMINESCENCE;

机译：量子点磁场电子结构磁光;

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1. Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T [J] . Smirnov D, Raymond S, Studenikin S, Physica, B. Condensed Matter . 2004,第0期

机译：在高达73 T的磁场中通过高激发发光研究InAs / GaAs自组装量子点的电子结构
2. Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots [J] . Ming Gong, Kaimin Duan, Chuan-Feng Li, Physical review. B, Condensed Matter And Materials Physics . 2008,第4期

机译：自组装InAs / InP量子点的电子结构：与自组装InAs / GaAs量子点的比较
3. ELECTRONIC PROPERTIES OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOT STRUCTURES AND DEVICES STUDIED BY PHOTOCURRENT SPECTROSCOPY [J] . D. J. Mowbray, P. W. Fry, M. S. Skolnick Acta Physica Polonica. A . 2000,第3期

机译：光电光谱法研究InAs / GaAs自组装量子点结构和器件的电子性质
4. Influence of substrate orientation on InAs/GaAsquantum-dot growth studied by photoluminescence inpulsed magnetic fields [C] . J. Maes, M. Hayne, A. Patanè, International conference on the physics of semiconductors;ICPS . 2002

机译：衬底取向对InAs / GaAs量子点生长的影响
5. Electronic structure and optical properties of self-assembled InAs quantum dots. [D] . Yang, Weidong. 1999

机译：自组装InAs量子点的电子结构和光学性质。
6. Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates [O] . NW Strom, Zh M Wang, JH Lee, 2007

机译：GaAs环状纳米结构模板上的自组装InAs量子点形成
7. Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. [O] . Nuytten Thomas, Hayne Manus, Henini Mohamed, 2009

机译：在强磁场中研究的自组装InAs / GaAs量子点光致发光的温度依赖性。

Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T

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