Effective Auger excitation of erbium luminescence by hot electrons in silicon

M. S. Bresler; T. Gregorkiewicz; O. B. Gusev; P. E. Pak; I. N. Yassievich

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Effective Auger excitation of erbium luminescence by hot electrons in silicon

机译：硅中热电子对Aug发光的有效俄歇激发

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In an electroluminescent structure based on erbium-doped crystalline silicon we have found and studied a new mechanism of excitation of erbium ions involving Auger recombination of electrons from the upper subband of the conduction band with holes from the valence band. The new excitation mechanism is weak at low temperatures, but it is resonantly enhanced at 160 K, when the energy distance of the edge of the upper subband of the conduction band from the valence band edge coincides with the energy of the second excited state of the erbium ion due to temperature shrinking of the silicon energy gap.

机译：在基于掺-晶体硅的电致发光结构中，我们发现并研究了一种激发excitation离子的新机制，该机制涉及导带上部子带中的电子与价带空穴进行俄歇复合。新的激发机制在低温下较弱，但当导带的上子带边缘的能量距离价带边缘的能量距离与电子的第二激发态的能量一致时，它在160 K时会共振增强。 ion离子由于硅能隙的温度收缩而减小。

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《Physica, B. Condensed Matter》 |1999年第0期|共4页
作者
M. S. Bresler; T. Gregorkiewicz; O. B. Gusev; P. E. Pak; I. N. Yassievich;
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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
erbium-doped crystalline silicon; auger excitation; electroluminescence;

机译：掺晶体硅增强激发电致发光;

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专利

1. Effective Auger excitation of erbium luminescence by hot electrons in silicon [J] . M. S. Bresler, T. Gregorkiewicz, O. B. Gusev, Physica, B. Condensed Matter . 1999,第0期

机译：硅中热电子对Aug发光的有效俄歇激发
2. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping [J] . Yablonskiy A.N., Andreev B.A., Kryzhkov D.I., Semiconductors . 2012,第11期

机译：高强度光泵浦条件下硅中离子的光致子带激发机理
3. Er~(3+) Photoluminescence Excitation Spectra in Erbium-Doped Epitaxial Silicon Structures [J] . B. A. Andreev, Z. F. Krasilnik, D. I. Kryzhkov, Physics of the solid state . 2004,第1期

机译：掺b外延硅结构中的Er〜（3+）光致发光光谱
4. PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF ERBIUM INCORPORATED WITH IRON IN OXIDIZED POROUS SILICON [C] . V. BONDARENKO, N. KAZUCHITS, M. BALUCANI, Reviews and Short Notes to Nanomeeting 2003 on Physics, Chemistry and Application of Nanostructures May 20-23, 2003 Minsk, Belarus . 2003

机译：氧化多孔硅中铁与铁结合的光致发光激发光谱
5. Photoluminescence excitation spectroscopy of hydrogenated amorphous silicon using a free electron laser. [D] . Mensing, Glennys Ann. 1999

机译：使用自由电子激光的氢化非晶硅的光致发光激发光谱。
6. Effective attenuation lengths for quantitative determination of surface composition by Auger-electron spectroscopy and X-ray photoelectron spectroscopy [O] . A. Jablonski, C. J. Powell -1

机译：通过俄歇电子能谱和X射线光电子能谱定量测定表面成分的有效衰减长度
7. Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide [O] . Cueff, Sébastien, Labbé, Christophe, Dierre, Benjamin, 2011

机译：掺富硅氧化硅的阴极发光和光致发光比较研究
8. Photoluminescence Excitation Measurements on Erbium Implanted GaN [R] . 1997

机译：铒注入GaN的光致发光激发测量

Effective Auger excitation of erbium luminescence by hot electrons in silicon

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