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首页> 外文期刊>Physica, B. Condensed Matter >Diffusion of nitrogen in gallium arsenide
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Diffusion of nitrogen in gallium arsenide

机译：氮在砷化镓中的扩散

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Diffusion of N in GaAs was studied in GaAs films grown by molecular beam epitaxy containing a buried N doping layer with a maximum concentration of about 10(19) cm(-3). The as-grown films were annealed at temperatures between 724degreesC and 922degreesC in an As-rich ambient and subsequently analysed by secondary ion mass spectrometry. We observed a remarkably fast, non-Gaussian broadening of the as-grown N distribution. Evaluation of the profile shape provides strong evidence for a kick-out diffusion mechanism on the As sublattice involving not only interstitial and substitutional N but also interstitial As as native point defect. Fitting within this framework yields the diffusion coefficient of N in GaAs as a function of temperature. It obeys an Arrhenius equation with an activation energy of 2.27 eV and a pre-exponential factor of 6.5 x 10(-3) cm(2) s(-1). The present N data are compared with reported diffusivities of the host atom As and some selected impurities in GaAs. (C) 2003 Elsevier B.V. All rights reserved. [References: 15]
机译：在通过分子束外延生长的GaAs薄膜中研究了N在GaAs中的扩散，该薄膜包含最大浓度约为10（19）cm（-3）的掩埋N掺杂层。将生长后的薄膜在富含As的环境中于724摄氏度至922摄氏度之间的温度下退火，然后通过二次离子质谱分析。我们观察到已生长的N分布显着快速，非高斯扩展。轮廓形状的评估为As子晶格上的踢出扩散机制提供了有力的证据，不仅涉及间隙N和替代N，而且间隙As作为本征点缺陷。在此框架内拟合可得出N在GaAs中的扩散系数随温度的变化。它服从Arrhenius方程，其激活能为2.27 eV，预指数因子为6.5 x 10（-3）cm（2）s（-1）。将当前的N数据与报告的主体原子As和GaAs中某些选定杂质的扩散率进行比较。 （C）2003 Elsevier B.V.保留所有权利。 [参考：15]

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