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首页> 外文期刊>Physica, B. Condensed Matter >Annealing study of a bistable defect in proton-implanted n-type 4H-SiC
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Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

机译：质子注入n型4H-SiC中双稳态缺陷的退火研究

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摘要

The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a dose of 1 X 10(12) cm(-2). One configuration of the bistable defect leads to two levels in the band gap, 0.42 eV (M-1) and 0.7-0.8 eV (M-3) below the conduction band edge (E-C), and another leads to one level (M-2) at E-C-0.7 eV. The defect can be switched back and forth between the two configurations by varying the applied bias and the sample temperature. Isochronal and isothermal annealing shows that the defect anneals out between 310degreesC and 370degreesC with a first-order kinetics process. The origin of the defect is not known but it is implantation-induced and a low-order complex. (C) 2003 Elsevier B.V. All rights reserved. [References: 17]
机译：Martin（Master Thesis，KTH / ELE / FTE / 2003-1）最近采用深能级瞬态光谱法并标记为M中心的双稳态缺陷的热稳定性和退火动力学已使用n型外延生长进行了研究。植入2.5 MeV质子至1 X 10（12）cm（-2）的4H-SiC层。双稳态缺陷的一种配置导致带隙中的两个电平，即导带边缘（EC）下方的0.42 eV（M-1）和0.7-0.8 eV（M-3），而另一种导致一个电平（M- 2）在EC-0.7 eV。通过改变施加的偏压和样品温度，可以在两种配置之间来回切换缺陷。等时和等温退火表明，该缺陷通过一级动力学过程在310°C至370°C之间退火。缺陷的起源尚不清楚，但它是由植入引起的低阶复合物。 （C）2003 Elsevier B.V.保留所有权利。 [参考：17]

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