Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride

Yuji Ando; Yasuko Hori; Walter Contrata; Norihiko Samoto

首页> 外文期刊>Physica, B. Condensed Matter >Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride

【24h】

Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride

机译：氮化镓中依赖温度的电子传输的全频带蒙特卡洛模拟

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A fast and compact full band Monte Carlo electron transport simulator has been developed, which can run on a personal computer. High-temperature transport simulation was demonstrated for GaN, and it predicts small temperature dependence of peak velocity and reduction of impact ionization at high temperature.

机译：已经开发了一种快速且紧凑的全频带蒙特卡洛电子传输模拟器，该模拟器可以在个人计算机上运行。对GaN进行了高温迁移模拟，它预测了峰值速度与温度的较小相关性，以及高温下碰撞电离的降低。

著录项

来源
《Physica, B. Condensed Matter》 |1999年第4期|共3页
作者
Yuji Ando; Yasuko Hori; Walter Contrata; Norihiko Samoto;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
GaN; monte Carlo simulation; electron mobility; impact ionization;

机译：氮化镓;蒙特卡罗模拟;电子迁移率;碰撞电离;

相似文献

外文文献
中文文献
专利

1. Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride [J] . Yuji Ando, Yasuko Hori, Walter Contrata, Physica, B. Condensed Matter . 1999,第1a4期

机译：氮化镓中依赖温度的电子传输的全频带蒙特卡洛模拟
2. Simulation of gallium nitride Gunn diodes at various doping levels and temperatures for frequencies up to 300 GHz by Monte Carlo simulation, and incorporating the effects of thermal heating [J] . R F Macpherson, G M Dunn, N J Pilgrim Semiconductor science and technology . 2008,第5期

机译：通过蒙特卡洛模拟仿真各种掺杂水平和温度下高达300 GHz频率的氮化镓耿氏二极管，并结合了热效应
3. Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis [J] . Poppy Siddiqua, Michael S. Shur, Stephen K. OLeary Journal of Applied Physics . 2020,第18期

机译：散装立方体氮化物内的电子传输：蒙特卡罗模拟分析
4. Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution [C] . Naoto Ito, Taichi Misawa, Yuji Awano International Conference on Simulation of Semiconductor Processes and Devices . 2016

机译：考虑局部声子数分布的纳米尺度氮化镓HEMT的电学和热学性质的高级准自洽蒙特卡洛模拟
5. Transport modeling in gallium nitride materials and devices based on full-band cellular Monte Carlo simulation. [D] . Yamakawa, Shinya. 2005

机译：基于全波段蜂窝蒙特卡洛模拟的氮化镓材料和器件中的传输模型。
6. A Comparison between Electron Gamma Shower National Research Council/Easy Particle Propagation (EGSnrc/Epp) and Monte Carlo N-Particle Transport Code (MCNP) in Simulation of the INTRABEAM ® System with Spherical Applicators [O] . Tegaw E. M., Geraily Gh., Etesami S. M., 2021

机译：电子伽玛淋浴国家研究委员会/简易粒子传播（EGSNRC / EPP）和蒙特卡罗N粒子传输代码（MCNP）在具有球形涂布器的模拟中进行比较
7. Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Ternaries [O] . Ternaries, Maziar Farahmand, Carlo Garetto, 2001

机译：monte-Carlo模拟III-氮化物纤锌矿相材料系统中的电子输运：二元和三元
8. Monte Carlo Evaluation of Tritium Beta Spectrum Energy Deposition in Gallium Nitride (GaN) Direct Energy Conversion Devices. [R] . Litz, M. 2014

机译：monte Carlo评价氮化镓（GaN）直接能量转换装置中氚β能谱的沉积。

Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride

摘要

著录项

相似文献

相关主题

期刊订阅