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首页> 外文期刊>Physica, C. Superconductivity and its applications >Epitaxial NiO buffer layer by chemical enhanced surface oxidation epitaxy on Ni-5%W RABiTS for YBCO coated conductors
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Epitaxial NiO buffer layer by chemical enhanced surface oxidation epitaxy on Ni-5%W RABiTS for YBCO coated conductors

机译：通过化学增强表面氧化外延在Ni-5％W RABiTS上进行YBCO涂层导体的外延NiO缓冲层

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摘要

For the deposition of YBa2CU3O7-(delta) (YBCO) on metallic Substrates like Ni-based rolling assisted biaxially textured substrates (RABiTS). buffer layers (e.g. NiO, CeO2, Y-stab. ZrO2) are necessary. In the beginning of the deposition process of oxide layers, often the formation of misoriented NiO (especially NiO(1 1 1)) is observed. It has been shown that a biaxially textured (0 0 1)-oriented NiO buffer layer can be grown by Surface Oxidation Epitaxy (SOE) at high temperatures (greater than or equal to1000degreesC) on many Ni-based RABiTS including micro-alloyed Ni, NiCr or NiV. RABiTS with high W content show very good mechanical properties but reveal some problems using the SOE method for producing a NiO buffer layer suitable for YBCO coated superconducting tapes.We found a chemical pretreatment which makes it possible to grow (0 0 1)-oriented, biaxially textured NiO buffer layers on Ni with high (5%) W content at temperatures ranging from 320degreesC to 1300degreesC and at ambient air. In this paper we report the influence of the chemical pretreatment, the oxidation time and the oxidation temperature on the properties of self oxidized NiO layers as well as the influence of the oxidation process on the substrate properties. By the deposition of a subsequent La0.7Ca0.3MnO3 (LCMO) buffer layer, YBCO was grown epitaxially on Ni-5%W-RABiTS with first results showing a critical current density J(c) of 1 x 10(5) A/cm(2) and a critical temperature T-c of 89 K. (C) 2004 Elsevier B.V. All rights reserved.
机译：用于在金属基材（如镍基轧制辅助双轴织构基材（RABiTS））上沉积YBa2CU3O7-δ（YBCO）。缓冲层（例如NiO，CeO2，Y形ZrO2）是必需的。在氧化物层沉积过程的开始，经常会观察到取向错误的NiO（特别是NiO（1 1 1））的形成。研究表明，在高温（大于或等于1000摄氏度）的高温下（包括微合金化的镍），可以通过表面氧化外延（SOE）生长双轴织构（0 0 1）取向的NiO缓冲层。 NiCr或NiV。具有高W含量的RABiTS表现出非常好的机械性能，但是使用SOE方法生产适用于YBCO涂层超导带的NiO缓冲层时发现了一些问题。我们发现了化学预处理可以使其生长（0 0 1）取向， Ni上的双轴织构NiO缓冲层具有较高（5％）的W含量，温度范围为320摄氏度至1300摄氏度，并且处于环境空气中。在本文中，我们报告了化学预处理，氧化时间和氧化温度对自氧化NiO层性能的影响，以及氧化工艺对基材性能的影响。通过沉积随后的La0.7Ca0.3MnO3（LCMO）缓冲层，YBCO在Ni-5％W-RABiTS上外延生长，初步结果显示临界电流密度J（c）为1 x 10（5）A / cm（2）和89 K的临界温度Tc。（C）2004 Elsevier BV保留所有权利。

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