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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots
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Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots

机译:一对弱耦合自组装InAs量子点中的单电子光谱

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Using a single electron transistor containing a single pair of weakly coupled self-assembled InAs quantum dots, we have studied the transport properties of elastic and inelastic single electron tunneling. We found a series of Coulomb diamonds above pinch off voltage and, below it, characteristic irregular structures in the current vs. source-drain voltage and gate voltage, consisting of "vertical lines" and "kinks". Based on a simple calculation, the vertical lines are assigned to elastic tunneling between aligned states of the two dots. The kinks come from change of electron number in the dots, observed in the inelastic tunneling regime through off-resonant states in the two dots. (C) 2003 Elsevier B.V. All rights reserved.
机译:使用包含一对弱耦合自组装InAs量子点的单电子晶体管,我们研究了弹性和非弹性单电子隧穿的传输特性。我们发现了一系列夹在截止电压以上的库伦钻石,在其之下,则在电流与源极-漏极电压和栅极电压之间表现出不规则的结构,由“垂直线”和“纽结”组成。基于简单的计算,将垂直线分配给两个点的对齐状态之间的弹性隧穿。扭结来自点中电子数的变化,这是在非弹性隧穿状态下通过两个点的非共振态观察到的。 (C)2003 Elsevier B.V.保留所有权利。

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