Damping MEMS Devices in Harsh Environments Using Active Thin Films

机译：使用有源薄膜在恶劣环境中阻尼mEms器件

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We report on fabrication and damping measurement of NiTi and Terfenol-D thin films. A model for prediction of the damping properties (tan delta) of a laminate using the material properties of the layers was developed. Damping properties in Nitinol thin film due only to residual stresses was measured to be as high as tan delta = 0.17 for large strain (0.9%). At lower strain levels a Nitinol/Silicon laminate was tested in a cantilever load frame. The damping value of the film was measured to be 0.28 (at 0.27% strain). A Nitinol/Terfenol-D/Nickel laminate was fabricated and tested in a cantilever loading. The damping value of the film was measured to be 0.2 (at 0.27% strain).

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作者
Carman, G. P.; Kerrigan, C. A.;
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年度 2008
页码 p.1-26
总页数 26
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Microelectromechanical systems ; Thin films ; Damping ; Residual stress ; Nickel alloys ; Titanium alloys ; Cantilever beams ; Laminates ; Measurement ; Fabrication;

机译：微机电系统;薄膜;阻尼;残余应力;镍合金;钛合金;悬臂梁;层压板;测量;制造;

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2. SLIDE FILM DAMPING AND SQUEEZE FILM DAMPING MODELS CONSIDERING GAS RAREFACTION EFFECTS FOR MEMS DEVICES [J] . ANDOJO ONGKODJOJO, FRANCIS E. H. TAY International Journal of Computational Engineering Science(IJCES) . 2003,第2期

机译：考虑MEMS设备的气体反射效应的滑动膜阻尼和挤压膜阻尼模型
3. Integration of Active Thin Films with Silicon Compatible Materials and Process Science Protocols for MEMS Scale Vibration Damping Applications [J] . M. W. Cole, W. D. Nothwang, S. Hirsch Integrated Ferroelectrics . 2005,第1期

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4. Study of TiW /Au thin films as metallization stack for high temperature and harsh environment devices on 6H Silicon Carbide [C] . A.Baeri, V.Raineri, F. Roccaforte, International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

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Damping MEMS Devices in Harsh Environments Using Active Thin Films

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