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Photonic Applications of Thin Film GaAs Grown on Silicon and Insulating Substrates by Molecular Beam Epitaxy.

机译：分子束外延生长在硅和绝缘衬底上的薄膜Gaas的光子学应用。

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Thin film GaAs layers grown by Molecular Beam Epitaxy (MBE) on silicon, semi-insulating GaAs, and insulating substrates have been investigated for application to optoelectronic circuit technology. Photoconductivity measurements were conducted to characterize the electronic transport properties of the epitaxial layers in terms of carrier recombination lifetime and effective drift mobility. By varying the epitaxial growth parameters, it is possible to obtain various levels of material quality which are suitable for various components of optoelectronic integrated circuits. Results from photodetectors fabricated from GaAs grown on various layers will be presented. The fabrication of ridge waveguides from GaAs grown on silicon dioxide will also be described. Finally, a procedure for growing high quality GaAs for active devices in situ with layers for picosecond photoconductors will be discussed. 5 refs., 6 figs. (ERA citation 13:057055)

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Morse, J. D.; McWright, G. M.; Mariella, R. P.; Behymer, E. M.; Guthreau, W. H.;
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年度 1988
页码 1-11
总页数 11
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium Arsenides; Lithium; Niobates; Sapphire; Silicon; Silicon Oxides; Electrical Insulators; Molecular Beam Epitaxy; Photodetectors; Crystal Growth; Fabrication; Layers; Photoconductivity; Substrates; Surfaces; Thin Films; Waveguides; ERDA/360603; ERDA/360601;

机译：砷化镓;锂;铌酸盐;蓝宝石;硅;氧化硅;电绝缘体;分子束外延;光电探测器;晶体生长;制造;层;光电导率;基板;表面;薄膜;波导; ERDa / 360603; ERDa / 360601;以及它们的混合物。;

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1. Structural and optical properties of n-type and p-type GaAS_((1-x))Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [J] . De Souza Daniele, Alhassan Sultan, Alotaibi Saud, Semiconductor science and technology . 2021,第7期

机译：通过分子束外延生长的n型和p型GaAs _（（1-x））Bix薄膜的结构和光学性质（311）BaAs基材
2. Electrotransport Properties of p-ZnSnAs_2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates [J] . Joel T. ASUBAR, Ariyuki Kato, Yoshio JINBO, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2008,第1Issue2期

机译：半绝缘（001）InP衬底上分子束外延生长的p-ZnSnAs_2薄膜的电传输性质
3. Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study [J] . Jordi Ibanez, Esther Alarcon-Llado, Ramon Cusco, Journal of materials science . 2009,第suppla期

机译：通过分子束外延在（100）和非（100）GaAs衬底上生长的（In，Ga）（As，N）稀薄膜：拉曼散射研究
4. Properties of InSb thin films sandwiched by Al{sub}0.1In{sub}0.9Sb insulating layers grown on GaAs(100) substrates by molecular beam epitaxy [C] . Ichiro Shibasaki, Hirotaka Geka, Satoshi Yamada, IEEE Sensors . 2007

机译：通过分子束外延在GaAs（100）衬底上生长的Al {Sub} 0.1in×0.1in {sub}×0.9SB绝缘层的性质
5. MOCVD Grown InP and Related Thin Films on Silicon Substrates for Electron and Photonic Devices Applications. [D] . Zhong, Zhenyu. 2010

机译：在电子和光子器件应用的硅基板上MOCVD生长的InP和相关薄膜。
6. Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy [O] . Shun-Tsung Lo, Chiashain Chuang, Sheng-Di Lin, 2011

机译：通过分子束外延生长在GaAs衬底上的铝薄膜中的磁传输
7. Thin Films of SnSe 2 Grown by Molecular Beam Epitaxy on GaAs (111)B Substrates [O] . Brian D. Tracy, Xinyu Liu, Jacek K. Furdyna, 2016

机译：通过分子束外延在GaAs（111）B基板上产生的SNSE 2的薄膜
8. High-Quality GaAs MESFET's Grown on Silicon Substrates by Molecular-Beam Epitaxy. [R] . Morkoc, H., Peng, C. K., Henderson, T., 1985

机译：通过分子束外延在硅衬底上生长高质量Gaas mEsFET。

Photonic Applications of Thin Film GaAs Grown on Silicon and Insulating Substrates by Molecular Beam Epitaxy.

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