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Electron Mobility Studies of Device Quality InAs/GaAs Short Period Supprlattices Grown by Dynamic Stoichiometry Control and Floating In Flash-off Methods

机译：通过动态化学计量控制和浮动闪烁方法生长的器件质量Inas / Gaas短周期晶格的电子迁移率研究

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The Strained Layer InGaAs/GaAs system has been the subject of substantial work emphasizing both growth studies and device applications. Relatively few studies have successfully explored the binary InAs on GaAs system because of the difficulties of maintaining a specular growth front and the apparently small value of the critical thickness.

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作者
Grunthaner, F. J.; George, T.; Zang, D. P.; Lewis, J.; Griffen, J.; Tang, X.; Liu, J. K.; Pike, W. T.; Spencer, M. G.;
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年度 1993
页码 1-3
总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
DYNAMIC CONTROL; ELECTRON MOBILITY; FLOATING; GALLIUM ARSENIDES; INDIUM GALLIUM ARSENIDES; STOICHIOMETRY; THICKNESS; Electron Mobility;

机译：动态控制;电子移动;浮动; GaLLIUm aRsENIDEs;铟镓砷;化学计量学;厚度;电子迁移率;

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1. Wavelength control of 1.3-1.6 mu m light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates [J] . Mori J, Nakano T, Shimada T, Journal of Applied Physics . 2004,第3期

机译：在InP（411）A衬底上生长的GaAs / InAs短周期超晶格中自形成的量子点发出的1.3-1.6μm发光的波长控制
2. Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications [J] . Nagarajan S., Korah Reeba, Kalavathy G. Maria Journal of Nanoelectronics and Optoelectronics . 2017,第12期

机译：Goatelength对高频应用的InGaAs / InAs / InGaAs复合通道双材料双栅极高电子移动性晶体管装置的影响
3. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics [J] . Utrilla A.D., Reyes D.F., Ulloa J.M., Applied Physics Letters . 2014,第4期

机译：GaAsSb / GaAsN短周期超晶格作为覆盖层，用于改进的基于InAs量子点的光电
4. Optical properties of the quantum dot structures self-formed in GaAs/InAs short-period superlattices grown on InP(411)A substrates [C] . Mori J., Nakano T., Hasegawa S., Indium Phosphide and Related Materials, 2003. International Conference on . 2003

机译：在InP（411）A衬底上生长的GaAs / InAs短周期超晶格中自形成的量子点结构的光学性质
5. Quality inspection and reliability study of solder bumps in packaged electronic devices: Using laser ultrasound and finite element methods [D] . Yang, Jin 2008

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6. A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m n ≤ 10) Superlattices Based on Density Functional Theory Calculations [O] . Qing-Lu Liu, Zong-Yan Zhao, Jian-Hong Yi, 2018

机译：基于密度泛函理论计算的短周期（GaAs）m（AlAs）n（mn≤10）超晶格的电子结构和物理性质的高通量研究
7. Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy [O] . Robb, P.D., Finnie, M., Craven, A.J. 2012

机译：在像差校正扫描透射电子显微镜中使用柱比映射表征Inas / Gaas短周期超晶格
8. Study of (InAs)m(GaAs)n Short-Period Superlattice Layers Grown on GaAs Substratesby Molecular-Beam Epitaxy [R] . Jang, J. G., Miller, D. L., Jung-Geao, J. 1992

机译：分子束外延生长在Gaas衬底上的（Inas）m（Gaas）n短周期超晶格层的研究

Electron Mobility Studies of Device Quality InAs/GaAs Short Period Supprlattices Grown by Dynamic Stoichiometry Control and Floating In Flash-off Methods

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