In this study, we report synthesis of large areaud(>2cm^2), crack-free GaAs and GaInP doubleudheterostructures grown in a multi-junction solar cell-likeudstructure by MOCVD. Initial solar cell data are alsoudreported for GaInP top cells. These samples were grownudon Ge/Si templates fabricated using wafer bonding and ionudimplantation induced layer transfer techniques. The doubleudheterostructures exhibit radiative emission with uniformudintensity and wavelength in regions not containingudinterfacial bubble defects. The minority carrier lifetime ofud~1ns was estimated from photoluminescence decayudmeasurements in both double heterostructures.udWe also report on the structural characteristics ofudheterostructures, determined via atomic force microscopyudand transmission electron microscopy, and correlate theseudcharacteristics to the spatial variation of the minorityudcarrier lifetime.
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