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Synthesis of high-refractive index sulfur containing polymers for 193-nm immersion lithography: A progress report

机译:用于193 nm浸没式光刻的高折射率含硫聚合物的合成:进展报告

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摘要

To be able to extend the 193 nm immersion lithography technology platform, the development of high refractive index immersion fluids and resists is required. This paper reports our investigations into generating high refractive index polymers for use in photoresist formulations for 193 nm immersion lithograph. In this study a series of model compounds have been screened for refractive index and transparency at 589 nm and 193 nm. For the compounds studied this series of experiments demonstrated that sulfur-containing compounds have a positive effect on the refractive index of a molecule at 589 nm. However, the situation is complicated by the presence of absorption bands for some small molecules in the low waveleingth region. To demonstrate this, we examined the refractive index dispersion of a series of molecules based on ethyl acetate with varying degrees of sulfur substitution. These results indicated that an anomalous increase in refractive index could be expected 20 - 30 nm above the absorption maximum. The implications for design of high refractive index resists for 193 nm immersion lithography are discussed.
机译:为了能够扩展193 nm浸没式光刻技术平台,需要开发高折射率浸没液和抗蚀剂。本文报告了我们对生成用于193 nm浸没式光刻机的光致抗蚀剂配方的高折射率聚合物的研究。在这项研究中,已经筛选了一系列模型化合物的589 nm和193 nm的折射率和透明度。对于所研究的化合物,这一系列实验证明,含硫化合物对分子在589 nm的折射率有积极影响。但是,由于在低波长区存在一些小分子的吸收带,使情况变得复杂。为了证明这一点,我们检查了一系列具有不同硫取代度的基于乙酸乙酯的分子的折射率色散。这些结果表明,可以预期,在最大吸收值之上20-30 nm,折射率会异常增加。讨论了用于193 nm浸没式光刻的高折射率抗蚀剂设计的意义。

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