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Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications

机译：用于薄膜光伏应用的热线化学气相沉积法合成大颗粒多晶硅

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In this study, we investigate the fabrication of large-grained polycrystalline silicon by hot-wire chemical vapor deposition (HWCVD) and its suitability for thin-film photovoltaic applications. We have devised two strategies for the fast, low-temperature growth of thin polycrystalline silicon films on glass substrates. The first is the direct growth of polycrystalline silicon on SiO2 by HWCVD. We use atomic force microscopy (AFM) to characterize fully continuous polycrystalline silicon films grown by HWCVD on SiO2, as well as the nucleation density of silicon islands formed in the early stages of HWCVD growth, as a function of temperature and hydrogen dilution (H2:SiH4). Our observations of the nucleation kinetics of Si on SiO2 can be explained by a rate-equation pair-binding model, from which we derive an estimate for the prefactor and activation energy for surface diffusion of Si on SiO2 during HWCVD growth and assess the viability of this method for the rapid growth of large-grained polycrystalline silicon on SiO2.ududThe second strategy uses large-grained (~100 microns) polycrystalline silicon layers fabricated by selective nucleation and solid-phase epitaxy (SNSPE) on SiO2 substrates as templates for epitaxial growth by HWCVD. Using reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have derived a phase diagram for Si on Si(100) consisting of epitaxial, twinned epitaxial, mixed epitaxial/polycrystalline, and polycrystalline phases of growth on Si(100) in the 50 nm?2 micron thickness regime. Evidence is also presented for epitaxial growth on SNSPE templates, which use nickel nanoparticles as nucleation sites for the solid-phase crystallization of phosphorus-doped amorphous silicon on SiO2. Minority carrier lifetimes for films on Si(100), as measured by resonant-coupled photoconductive decay experiments, range from 5.7 to 14.8 microseconds while those for films on SNSPE templates range from 5.9 to 19.3 microseconds. Residual nickel present in the SNSPE templates does not significantly affect the lifetime of films grown on SNSPE templates, making the growth of epitaxial layers by HWCVD on SNSPE templates a possible strategy for the fabrication of thin-film photovoltaics.
机译：在这项研究中，我们研究通过热线化学气相沉积（HWCVD）制备大晶粒多晶硅及其对薄膜光伏应用的适用性。我们设计了两种策略来在玻璃基板上快速，低温地生长多晶硅薄膜。首先是通过HWCVD在SiO2上直接生长多晶硅。我们使用原子力显微镜（AFM）来表征通过HWCVD在SiO2上生长的完全连续的多晶硅膜，以及HWCVD生长早期形成的硅岛的成核密度，作为温度和氢稀释的函数（H2： SiH4）。我们对Si在SiO2上的成核动力学的观察可以通过速率方程对结合模型来解释，从中我们可以得出HWCVD生长过程中Si在SiO2上表面扩散的前因和活化能的估计值，并评估了Si的可行性。第二种策略是使用通过在SiO2衬底上进行选择性成核和固相外延（SNSPE）制成的大晶粒（〜100微米）多晶硅层作为模板，该方法用于在SiO2上快速生长大晶粒的多晶硅。通过HWCVD进行外延生长。使用反射高能电子衍射（RHEED）和透射电子显微镜（TEM），我们得出了Si（100）上Si的相图，该相图由Si上的外延生长，孪生外延，混合外延/多晶和多晶相组成（100）在50 nm？2微米的厚度范围内。还提供了在SNSPE模板上外延生长的证据，该模板使用镍纳米颗粒作为成核位点，以使SiO2上的磷掺杂非晶硅固相结晶。通过共振耦合光电导衰减实验测得的Si（100）上的薄膜的少数载流子寿命为5.7至14.8微秒，而SNSPE模板上的薄膜的载流子寿命为5.9至19.3微秒。 SNSPE模板中存在的残留镍不会显着影响在SNSPE模板上生长的薄膜的寿命，因此，通过HWCVD在SNSPE模板上生长外延层的方法成为制造薄膜光伏电池的可能策略。

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    Mason Maribeth Swiatek;

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  • 年度 2004
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