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Graphene-semiconductor based wavelength selective photodetector for sub-bandgap photo detection

机译：用于子带隙光检测的基于石墨烯半导体的波长选择光检测器

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摘要

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

机译：提供了能够在相对于半导体纳米颗粒的带隙的子带隙区域中操作的石墨烯光电检测器及其制造方法。光电探测器可以包括石墨烯层，半导体纳米颗粒层，介电层，支撑介质和包装层。半导体纳米颗粒可以是带隙大于要检测的光子能量的半导体。

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公开/公告号US10755866B2

专利类型
公开/公告日2020-08-25

原文格式PDF
申请/专利权人 THE UNIVERSITY OF HONG KONG;
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申请/专利号US201715614975
发明设计人 JINYAO TANG;ZE XIONG;JIAWEI CHEN;
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申请日2017-06-06
分类号H01G9/20;G01J1/44;G03F7/004;G03F7/20;H01G9;H01L51;H01L51/42;H01L51/44;
国家 US
入库时间 2022-08-21 11:30:20

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