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GRAPHENE-SEMICONDUCTOR BASED WAVELENGTH SELECTIVE PHOTODETECTOR FOR SUB-BANDGAP PHOTO DETECTION
GRAPHENE-SEMICONDUCTOR BASED WAVELENGTH SELECTIVE PHOTODETECTOR FOR SUB-BANDGAP PHOTO DETECTION
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机译:用于子带隙光检测的基于石墨烯-半导体的波长选择性光电检测器
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摘要
Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.
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