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Data mapping enabling fast read multi-level 3D NAND to improve lifetime capacity

机译:数据映射支持快速读取多层3D NAND,以提高使用寿命

摘要

In this disclosure, data mapping based on three dimensional lattices that have an improved sum rate (i.e., lifetime capacity) with low read latency is disclosed. During the write, a memory location is written to multiple times prior to erasure. Specifically, for the first write, there are 4/3 bits per cell available for writing, which is about 10.67 kB per cell are used for data storage. Then, for the second write, there is one bit per cell, which is 8 kB per cell for data storage. If considering a block with 128 different cells and writing 32 kB of data, the first write results in 42.66 data writes while the second write results in 32 writes for a total of 74.66 writes. Previously, the number of writes for 32 kB would be 64 writes. Thus, by writing twice prior to erasure, more data can be stored.
机译:在本公开中,公开了基于三维晶格的数据映射,该三维晶格具有改进的求和率(即,寿命容量)和低读取等待时间。在写入过程中,在擦除之前会多次写入存储位置。具体来说,对于第一次写入,每个单元有4/3位可用于写入,每个单元大约10.67 kB用于数据存储。然后,对于第二次写入,每个单元只有一位,每个单元为8 kB用于数据存储。如果考虑一个具有128个不同单元的块并写入32 kB数据,则第一次写入将导致42.66次数据写入,而第二次写入将导致32次写入,总共执行74.66次写入。以前,32 kB的写入数将为64。因此,通过在擦除之前写入两次,可以存储更多数据。

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