Dielectric/metal barrier integration to prevent copper diffusion

• 1. 防止铜扩散的电介质/金属阻挡体集成 [P] . 中国专利： CN106463396B . 2020.03.10
• 2. 防止铜扩散的电介质/金属阻挡体集成 [P] . 中国专利： CN106463396A . 2017-02-22
• 3. / DIELECTRIC/METAL BARRIER INTEGRATION TO PREVENT COPPER DIFFUSION [P] . KR20210103592A . 2021-08-23

  机译： /介质/金属屏障整合以防止铜扩散

• 4. Dielectric/metal barrier integration to prevent copper diffusion [P] . 美国专利： US10008448B2 . 2018-06-26

  机译： 介电/金属势垒集成以防止铜扩散

• 5. DIELECTRIC/METAL BARRIER INTEGRATION TO PREVENT COPPER DIFFUSION [P] . 美国专利： US2017162511A1 . 2017-06-08

  机译： 介电/金属阻挡层集成以防止铜扩散

• 1. Preparation of Copper Nanoparticles Using Dielectric Barrier Discharge at Atmospheric Pressure and its Mechanism [J] . DI Lanbo, ZHANG Xiuling, XU Zhijian 等离子体科学和技术（英文版） . 2014,第001期
• 2. Microstructure and strength of TiAl/40Cr joint diffusion bonded with vanadium-copper filler metal [J] . 何鹏, 冯吉才, 钱乙余, 中国有色金属学报（英文版） . 2002,第005期
• 3. Numerical study of the influence of dielectric tube on propagation of atmospheric pressure plasma jet based on coplanar dielectric barrier discharge [J] . Haixin HU, Feng HE, Ping ZHU, 等离子体科学和技术（英文版） . 2018,第005期
• 4. Comparison of characteristics and integration of copper diffusion-barrier dielectrics [J] . T.C. Wang, Y.L. Cheng, Y.L. Wang, Thin Solid Films . 2006,第1a2期
• 5. Suppression of Copper Diffusion Through Barrier Metal-Free Hydrogen Silsesquioxane Dielectrics By NH3, Plasma Treatment [J] . K.Chang, I.Deng Electrochemical and solid-state letters . 1999,第12期
• 6. Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier [J] . Biljana Mesic, Herbert Schroeder Journal of Applied Physics . 2011,第6期
• 7. Using NH3 Plasma Treated Spin-on Low-k film as Barrier Metal-Free Dielectric to Suppress Copper Diffusion and Improve Its Ashing Resistance [C] . I-Chung Deng, Yao-Pin Tsai, Sy-Jer Yeh The Meeting of the Electrochemical Society . 2000
• 8. Adhesion in a Copper-Ruthenium Multilayer Nano-scale Structure and the Use of a Miedema Plot to Select a Diffusion Barrier Metal for Copper Metallization [D] . Venkatesh, Srilakshmi Hosadurga 2010
• 9. Contact Killing of Bacteria on Copper Is Suppressed if Bacterial-Metal Contact Is Prevented and Is Induced on Iron by Copper Ions [O] . Salima Mathews, Michael Hans, Frank Mücklich, 2013
• 10. Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier [O] . Mesic B., Schroeder H. 2011
• 11. Amorphous Metallic Alloys: A New Advance in Thin-Film Diffusion Barriers forCopper Metallization [R] . Kolawa, E., Reid, J. S., Chen, J. S. 1992

• 1. EFFECT OF METAL-OXIDE DIFFUSION BARRIER ON INTERDIFFUSION OF ELEMENTS BETWEEN COATING AND SUBSTRATE [J] . SUN Biwu GUAN Hengrong SUN Xiaofeng (Institute of Metal ResearchAcademia SinicaShenyang)LI Tiefan (Institute of Corrosion and Protection of MetalsAcademia SinicaShenyang) . 金属学报：英文版 . 1991,第9期
• 2. CHEMICAL VAPOR DEPOSITION OF DIFFUSION BARRIERS FOR ADVANCED METALLIZATION [J] . . 化工学报 . 2000,第0S1期
• 3. 氦原子在金属中的扩散势垒计算 [C] . 彭述明 ,徐志磊 . 第九届全国原子与分子物理学术会议 . 1998
• 4. 集成电路铜金属化中的Mo基扩散阻挡层研究 [A] . 宋双喜 . 2005