Shrinkage of critical dimensions in a semiconductor device by selective growth of a mask material

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• 2. 使用高选择性硬掩模形成沟槽的方法及使用该方法的半导体器件隔离方法 [P] . 中国专利： CN1963999A . 2007-05-16
• 3. Shrinkage of Critical Dimensions in a Semiconductor Device by Selective Growth of a Mask Material [P] . 美国专利： US2012244710A1 . 2012-09-27

  机译： 通过掩模材料的选择性生长缩小半导体器件中的关键尺寸

• 4. MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER [P] . 美国专利： US2010081225A1 . 2010-04-01

  机译： 半导体层选择区生长的掩模图案和利用半导体层选择区的掩模生长方法

• 5. MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER [P] . 世界知识产权组织专利： WO2008069432A1 . 2008-06-12

  机译： 半导体层选择区生长的掩模图案和利用半导体层选择区的掩模生长方法

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