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Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells
Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells
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机译:半导体器件包括具有第一单元和第二单元的单元阵列,第二单元散布在第一单元的布置周围
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摘要
A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n−-type semiconductor layer; and a p-type surface layer formed in a central portion of each of cells. In a contact cell, the p-type buried layer is in contact with the p-type surface layer. The semiconductor device further includes: a p+-type contact layer formed on the p-type surface layer of the contact cell; and an anode electrode provided on the n−-type semiconductor layer. The anode electrode forms a Schottky junction with the n−-type semiconductor layer and forms an ohmic junction with the p+-type contact layer.
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