MEMORY SYSTEM WITH THREE MEMORY LAYERS HAVING DIFFERENT BIT PER CELL STORAGE CAPACITIES

• 1. 含有具有不同每单元位的存储容量的三个存储层的存储器系统 [P] . 中国专利： CN103477393A . 2013-12-25
• 2. 具有在不同金属层上的第一和第二读字线及写字线以及跨每个SRAM位单元的边界边缘拆分的相关联着陆焊盘的三端口SRAM位单元 [P] . 中国专利： CN107004439A . 2017-08-01
• 3. MEMORY SYSTEM WITH THREE MEMORY LAYERS HAVING DIFFERENT BIT PER CELL STORAGE CAPACITIES [P] . 世界知识产权组织专利： WO2012134864A3 . 2012-12-27

  机译： 具有三个存储层的存储系统，每个单元存储容量具有不同的位

• 4. Semiconductor storage apparatus and memory system comprising memory cell holding data value of multiple bits [P] . 美国专利： US9922707B2 . 2018-03-20

  机译： 包括存储多位数据值的存储单元的半导体存储设备和存储系统

• 5. Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same [P] . 美国专利： US7817464B2 . 2010-10-19

  机译： 采用GeBiTe层作为相变材料层的相变存储单元，包括该相变存储单元的相变存储器件，包括该相变存储器件的电子系统及其制造方法

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