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N-TYPE AlGaN THIN FILM AND LIGHT EMITTING DEVICE FOR EMITTING ULTRAVIOLET
N-TYPE AlGaN THIN FILM AND LIGHT EMITTING DEVICE FOR EMITTING ULTRAVIOLET
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机译：N型AlGaN薄膜及紫外发光器件
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摘要
An n-type AlGaN thin film and a light emitting device for emitting ultraviolet are disclosed. The light emitting device for emitting ultraviolet includes AlN buffer layer on a substrate, an n-type AlGaN layer successively deposited on the buffer layer, an active layer, a p-type AlGaN layer. The doping density of silicon gradually increases as the n-AlGaN layer becomes separated from the AlN buffer.;COPYRIGHT KIPO 2014;[Reference numerals] (AA) Number of atoms/cm^3;(BB) Si doping time
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机译：公开了一种用于发射紫外线的n型AlGaN薄膜和发光器件。用于发射紫外线的发光器件包括：基板上的AlN缓冲层，相继沉积在缓冲层上的n型AlGaN层，有源层，p型AlGaN层。随着n-AlGaN层与AlN缓冲层的分离，硅的掺杂密度逐渐增加。; COPYRIGHT KIPO 2014; [参考数字]（AA）原子数/ cm ^ 3;（BB）Si掺杂时间
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