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Type II tunnel junction wide bandgap InP having a lattice constant for multi-junction solar cell

机译:具有多晶太阳能电池晶格常数的II型隧道结宽带隙InP

摘要

Type II tunnel junction comprising a p-doped AlGaInAs tunnel layer and the n-doped InP tunnel layer is disclosed. Solar cells of the configuration providing the type II tunnel junction wide bandgap between the photovoltaic sub-cell group is further disclosed.
机译:公开了包括p掺杂的AlGaInAs隧道层和n掺杂的InP隧道层的II型隧道结。还公开了在光伏子电池组之间提供II型隧道结宽带隙的配置的太阳能电池。

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