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TUNGSTEN SILICIDE ETCH PROCESS WITH REDUCED ETCH RATE MICRO-LOADING
TUNGSTEN SILICIDE ETCH PROCESS WITH REDUCED ETCH RATE MICRO-LOADING
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机译：降低钨丝腐蚀速率的钨硅腐蚀工艺
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摘要
embodiments the reduced etch rate micro-provides an improved tungsten suicide etching process with a loading effect . In one embodiment provides a method for etching a layer formed on a substrate. The method includes providing a substrate into a plasma processing chamber, the substrate, and the metal silicide layer is formed over the patterned mask is defined over the metal silicide layer. The method also includes the step of supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas and an oxygen-containing gas to the plasma processing chamber, the ratio of the nitrogen-containing gas to the fluorine-containing gas is from about 5 to about 15 is between. The method also includes generating a plasma in a plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask defining dense regions and isolated regions and, the generated plasma is reduced etch rate micro-loading in the compact configuration so as to remove one of the metal silicide regions and isolated regions cheungreul
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