首页> 外国专利> FLASH MEMORY STORAGE DEVICE CAPABLE OF VERIFYING RELIABILITY BY USING A BYPASS PATH, A SYSTEM AND A METHOD FOR VERIFYING THE RELIABILITY OF THE FLASH MEMORY STORAGE DEVICE

FLASH MEMORY STORAGE DEVICE CAPABLE OF VERIFYING RELIABILITY BY USING A BYPASS PATH, A SYSTEM AND A METHOD FOR VERIFYING THE RELIABILITY OF THE FLASH MEMORY STORAGE DEVICE

机译:能够通过旁路路径来验证可靠性的闪存存储设备,用于验证闪存存储设备可靠性的系统和方法

摘要

PURPOSE: A flash memory storage device capable of verifying reliability by using a bypass path, a system and a method for verifying the reliability of the flash memory storage device are provided to objectively verify the reliability of a completely developed result.;CONSTITUTION: A controller(101) controls a flash memory chip. A first connector(102) is formed for a first path between the flash memory chip and the controller. A second connector(103) is formed for a second path between the controller and a test support system to test a flash memory storage device. The controller selectively activates the first path or the second path.;COPYRIGHT KIPO 2013;[Reference numerals] (100) Flash memory storage device; (101) Controller; (104) Flash memory chip; (110) Test support system; (130) Host; (140) Host interface;
机译:目的:提供一种能够通过旁路路径来验证可靠性的闪存存储设备,一种用于验证闪存存储设备的可靠性的系统和方法,以客观地验证完全开发的结果的可靠性。 (101)控制闪存芯片。第一连接器(102)被形成用于闪存芯片和控制器之间的第一路径。在控制器和测试支持系统之间的第二路径上形成第二连接器(103),以测试闪存存储设备。控制器选择性地激活第一路径或第二路径。COPYRIGHT KIPO 2013; [附图标记](100)闪存存储设备; (101)控制器; (104)闪存芯片; (110)测试支持系统; (130)主持人; (140)主机接口;

著录项

  • 公开/公告号KR20130032151A

    专利类型

  • 公开/公告日2013-04-01

    原文格式PDF

  • 申请/专利权人 SNU R&DB FOUNDATION;

    申请/专利号KR20110095882

  • 发明设计人 YOON JIN HYUK;MIN SANG LYUL;NAM EYEE HYUN;

    申请日2011-09-22

  • 分类号G11C29/00;G11C16/06;G11C16/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:24

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