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HIGHLY SCALED ETSOI FLOATING BODY MEMORY AND MEMORY CIRCUIT

机译:高度缩放的ETSOI浮动体存储器和存储器电路

摘要

A floating body memory cell, memory circuit, and method for fabricating floating body memory cells. The floating body memory cell includes a bi-layer heterojunction having a first semiconductor coupled to a second semiconductor. The first semiconductor and the second semiconductor have different energy band gaps. The floating body memory cell includes a buried insulator layer. The floating body memory cell includes a back transistor gate separated from the second semiconductor of the bi-layer heterojunction by at least the buried insulated layer. The floating body memory cell also includes a front transistor gate coupled to the first semiconductor of the bi-layer heterojunction.
机译:浮体存储单元,存储电路以及用于制造浮体存储单元的方法。浮体存储单元包括双层异质结,该双层异质结具有耦合至第二半导体的第一半导体。第一半导体和第二半导体具有不同的能带隙。浮体存储单元包括掩埋绝缘体层。浮体存储单元包括至少通过掩埋绝缘层与双层异质结的第二半导体分开的背晶体管栅极。浮体存储单元还包括耦合到双层异质结的第一半导体的前晶体管栅极。

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