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The silicon substrate which possesses the high density silicon oxide film which is produced with the production manner and its production manner of the high density silicon oxide film, in
The silicon substrate which possesses the high density silicon oxide film which is produced with the production manner and its production manner of the high density silicon oxide film, in
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机译：具有高密度氧化硅膜的硅基板，其通过高密度氧化硅膜的制造方法及其制造方法来制造。
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摘要
PROBLEM TO BE SOLVED: To provide a manufacturing method of a high-density silicon oxide film, which suppresses the occurrence of a sub-oxide layer as much as possible without damaging a surface of a film formation substrate and improves insulating characteristics of an oxide film furthermore to make the oxide film thin, and a silicon substrate and a semiconductor device which include the high-density silicon oxide film manufactured by the manufacturing method.;SOLUTION: A silicon substrate 1 is heated to an arbitrary temperature in a range of 300 to 430°C under one atmosphere oxygen pressure, and an oxide film 3 is formed on a surface of the silicon substrate 1 while irradiating the silicon substrate with ultraviolet rays at ≤222 nm and making oxygen gas flow to the surface of the silicon substrate at ≥100 ml/min in terms of oxygen gas flow rate at 20°C in a flowmeter.;COPYRIGHT: (C)2009,JPO&INPIT
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