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Liquid phase epitaxial growth method of single crystal silicon carbide, method for producing a single crystal silicon carbide substrate, and single crystal silicon carbide substrate
Liquid phase epitaxial growth method of single crystal silicon carbide, method for producing a single crystal silicon carbide substrate, and single crystal silicon carbide substrate
PROBLEM TO BE SOLVED: To provide a liquid phase epitaxial growth method of a single crystal silicon carbide, by which a single crystal silicon carbide having a large surface area can be epitaxially grown at a reduced cost.;SOLUTION: A polycrystalline SiC substrate 20 as a carbon feed substrate having a free energy higher than that of a single crystal SiC substrate 15 is arranged opposite to the single crystal SiC substrate 15 as a seed substrate. Further, a silicon plate 23 is arranged between the single crystal SiC substrate 15 and the polycrystalline SiC substrate 20. Thereafter, the silicon plate 23 is melted by heat treating them under high vacuum high temperature environment so as to interpose an extremely thin melt layer of Si as solvent between the single crystal SiC substrate 15 and the polycrystalline SiC substrate 20. Then, a single crystal silicon carbide is epitaxially grown on the surface of the single crystal SiC substrate 15 in a liquid phase by a metastable solvent epitaxy (MSE) method using, as driving force, the concentration gradient generated in the Si melt layer based on the difference between free energies of the substrates 15, 20.;COPYRIGHT: (C)2009,JPO&INPIT
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