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fabrication method of high efficiency multiple junction solar cell using II-VI compound semiconductor layers

机译:II-VI族化合物半导体层的高效多结太阳能电池的制备方法

摘要

The present invention relates to a method for manufacturing highly efficient multi-junction solar cells, and aims to address the technical subject matter of a method for manufacturing highly efficient multi-junction solar cells using II-VI compound semiconductors which is characterized by including a process consisting of growing a II-VI compound semiconductor thin film comprising no In on a GaSn substrate. Thus, light of entire wavelength band of solar light can be efficiently absorbed without requiring a material such as In, which is becoming expensive due to the expected exhaustion thereof, thereby significantly reducing the costs of fabricating a solar cell and enabling the implementation of a highly efficient solar cell at a low cost.
机译:本发明涉及一种用于制造高效多结太阳能电池的方法,并且旨在解决使用II-VI族化合物半导体来制造高效多结太阳能电池的方法的技术主题,其特征在于包括一种工艺。包括在GaSn衬底上生长不包含In的II-VI化合物半导体薄膜。因此,不需要诸如In的材料就可以有效地吸收太阳光的整个波段的光,由于预期的耗尽,In等材料变得昂贵,从而显着降低了制造太阳能电池的成本并使得能够实现高成本。低成本的高效太阳能电池。

著录项

  • 公开/公告号KR101157555B1

    专利类型

  • 公开/公告日2012-06-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100087961

  • 发明设计人 장지호;

    申请日2010-09-08

  • 分类号H01L31/042;H01L31/0216;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:55

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