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FABRICATION METHOD OF HIGH EFFICIENCY MULTIPLE JUNCTION SOLAR CELL USING II-VI COMPOUND SEMICONDUCTOR LAYERS

机译:II-VI族复合半导体层制备高效多结太阳能电池的方法

摘要

PURPOSE: A method for manufacturing a multiple junction high efficient solar cell which uses an II-VI group compound semiconductor is provided to reduce manufacturing costs by efficiently absorbing light in the full spectrum domain of sunlight without using materials including indiem. CONSTITUTION: An II-VI group compound semiconductor thin film is grown up on the top of a GaSb substrate. The II-VI group compound semiconductor thin film does not include indium. A stibium molecular beam is irradiated on the surface of the GaSb substrate. The irradiation amount of the stibium molecular beam maintains molecular beam equivalent pressure of .5x10-7 Torr to 5.5x10-7 Torr at 500C-600C.
机译:目的:提供一种使用II-VI族化合物半导体的多结高效太阳能电池的制造方法,以通过有效吸收太阳光全光谱域中的光而无需使用包括独立材料的材料来降低制造成本。组成:一个II-VI族化合物半导体薄膜在GaSb衬底的顶部长大。 II-VI族化合物半导体薄膜不包含铟。锑分子束照射在GaSb衬底的表面上。锑分子束的照射量在500℃至600℃下将分子束当量压力维持在0.5×10-7托至5.5×10-7托。

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