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E-beam inspection structure for leakage analysis

机译:用于泄漏分析的电子束检查结构

摘要

A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage.
机译:一种测试结构和使用该测试结构的方法,其中该测试结构包括八个测试结构中的至少一个,当具有至少一个预定的结构缺陷时,该八个测试结构在电压对比扫描时表现出可辨别的缺陷特性。八个测试结构为:1)具有有源区(AA)/ P-N结泄漏; 2)具有一个接地隔离区; 3)具有AA / P-N结和隔离区; 4)具有栅极电介质泄漏和栅极至隔离区的接地; 5)具有通过AA / P-N结的栅极电介质泄漏到地漏; 6)具有栅极电介质对地和栅极/一侧隔离区对地泄漏; 7)具有通过AA / P-N结到地漏的超大栅极电介质; 8)具有AA / P-N结泄漏栅极电介质泄漏。

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