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METHOD crystal growth of gallium nitride substrate of crystals of gallium nitride epitaxial wafers METHOD FOR PRODUCING AND epitaxial wafers
METHOD crystal growth of gallium nitride substrate of crystals of gallium nitride epitaxial wafers METHOD FOR PRODUCING AND epitaxial wafers
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机译：方法氮化镓外延晶片晶体的氮化镓衬底的晶体生长方法制造和外延晶片
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摘要
1. A method of growing a gallium nitride crystal, wherein a carrier gas, a gallium nitride precursor, and a gas containing silicon as a dopant, a gallium nitride crystal is grown on the underlayer by vapor phase epitaxy from hydrides, characterized in that the temperature of the dew point of the carrier gas during the growth of the gallium nitride crystal -60 ° C or below. ! 2. A method for growth a gallium nitride crystal according to claim 1, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth is between 0.56 to 0.92 atm inclusive. ! 3. The substrate of gallium nitride crystals obtained by the process of growth of gallium nitride crystals according to claim 1 or 2, comprising! layer located below the substrate (underlayer); ! gallium nitride crystal formed on the underlayer. ! 4. A method of producing an epitaxial wafer, comprising:! stage of growth of gallium nitride crystal on the GaN sublayer method for crystal growth of claims 1-2; ! the step of removing at least a sublayer to form a substrate consisting of gallium nitride crystal; ! a step of forming epitaxially growing layer on the substrate and! processing step of the substrate surface on the side opposite that on which surface is formed by epitaxially growing the layer for reducing the thickness. ! 5. Epitaxial wafer obtained by a method of producing epitaxial wafers according to claim 4, comprising! and substrate! epitaxially growing a layer formed on the substrate.
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