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首页> 外文期刊>Journal of Vacuum Science & Technology >Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
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Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride

机译：InN在氧化镓上外延生长以及在氮化镓上改善的迁移增强余辉外延生长的初步结果

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摘要

In this paper, the authors report on epitaxial thin InN layers grown on commercially available undoped GaN buffer layers and on Ga2O3 interlayers produced by Migration-Enhanced Afterglow Epitaxy (MEAglow). The InN layers reported here, also grown by the MEAglow technique, are 100–200 nm thick and have a measured absorption edge between 1.3 and 1.95 eV. Advancements in the growth process have now allowed the authors to improve the InN layers so that the growth has excellent two-dimensional morphology. Scanning electron microscope images show that terracing is strongly evident for samples grown on GaN templates. Atomic force microscopy shows a maximum height of the steps of about 2 nm. For the samples grown on Ga2O3, crystal quality is superior to InN grown on AlN buffers with similar thicknesses. X-ray diffraction ω-2θ measurements indicate a full width of half maximum (FWHM) of 342–389 arcseconds for these extremely thin layers; a good part of this x-ray diffraction FWHM is likely due to residual strain between the InN and GaN or between the InN and oxide.
机译：在本文中，作者报告了在可购得的未掺杂GaN缓冲层上以及通过迁移增强余辉外延（MEAglow）生产的Ga2O3中间层上生长的外延InN薄层。此处报道的InN层也通过MEAglow技术生长，厚度为100-200 nm，测量的吸收边在1.3和1.95 eV之间。现在，生长过程的进步使作者能够改善InN层，从而使生长具有出色的二维形态。扫描电子显微镜图像显示，对于在GaN模板上生长的样品，梯形非常明显。原子力显微镜显示台阶的最大高度约为2 nm。对于在Ga2O3上生长的样品，晶体质量优于在具有相似厚度的AlN缓冲液上生长的InN。 X射线衍射ω-2θ测量结果表明，这些极薄层的半峰全宽（FWHM）为342-389弧秒。 X射线衍射FWHM的很大一部分可能是由于InN与GaN之间或InN与氧化物之间的残余应变。

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