PELLICLE FOR LITHOGRAPHY USED IN ULTRAVIOLET LIGHT EXPOSURE OF 200 NM OR LESS REQUIRING HIGH RESOLUTION

• 1. 一种用于光学透镜胶合的紫外线曝光灯箱 [P] . 中国专利： CN210098144U . 2020.02.21
• 2. 用于曝光机的紫外线光路系统 [P] . 中国专利： CN204347435U . 2015-05-20
• 3. PELLICLE FOR LITHOGRAPHY USED WHEN ULTRAVIOLET LIGHT EXPOSURE IS LESS THAN 200 NM [P] . 韩国专利： KR20100117496A . 2010-11-03

  机译： 紫外线照射少于200海里时使用的照相术用胶版

• 4. Pellicle for exposure to extreme ultraviolet light, photomask assembly and method of manufacturing the pellicle [P] . KR102310124B1 . 2021-10-08

  机译： 暴露于极端紫外光，光掩模组件和制造薄膜的方法的薄膜

• 5. Pellicle for exposure to extreme ultraviolet light, photomask assembly, and method of manufacturing the pellicle [P] . 美国专利： US10437143B2 . 2019-10-08

  机译： 用于暴露于极紫外光下的皮膜，光掩模组件以及该皮膜的制造方法

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• 3. Patterning Lead Zirconate Titanate Nanostructures at Sub~200-nm Resolution by Soft Confocal Imprint Lithography and Nanotransfer Molding [J] . Sajid U. Khan, Ole F. Gobel, Dave H. A. Blank ACS applied materials & interfaces . 2009,第10期
• 4. Effects of exposure environment on pellicle degradation in ArF lithography [C] . Hyungseok Choi, Yohan Ahn, Jeongin Yoon, Conference on Photomask Technology; 20070918-21; Monterey,CA(US) . 2007
• 5. Predicting Pattern Surface Distortions of Extreme Ultraviolet Lithography Masks due to Particle Entrapment during Exposure Chucking. [D] . Ramaswamy, Vasudevan. 2011
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• 7. Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography [O] . Andreas Frommhold, Alexandra McClelland, Dongxu Yang, 2015

• 1. INTRACELLULAR INOSITOL PHOSPHATES METABOLISM IN NIH 3T3 CELLS AFTER EXPOSURE TO ULTRAVIOLET LIGHT. [J] . Cheol O.Joe . 癌变．畸变．突变 . 1991,第0S1期
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