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Immersion Fluid for Immersion Lithography, and Method of Performing Immersion Lithography

机译:用于浸没式光刻的浸入液以及进行浸没式光刻的方法

摘要

An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.
机译:浸没式光刻系统 10 包括光学表面 51 ,pH值小于7的浸没液 60 ,至少与光学部分的一部分接触。半导体结构 80 ,该半导体结构具有最上面的光刻胶层 70 ,其中光刻胶的一部分与浸液接触。此外,一种用于照射具有最上层光刻胶层 70 的半导体结构 80 的方法包括以下步骤:将浸没液 60 引入空间中在光学表面 51 和光致抗蚀剂层之间,其中浸没流体的pH值小于7,并且优选将波长小于450nm的光穿过浸没流体并射到光致抗蚀剂上。

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