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Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power

机译:使用VHF-RF功率的等离子体增强CVD低k碳掺杂氧化硅膜沉积

摘要

A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.
机译:一种在基板上沉积低介电常数膜的方法。在一个实施例中,该方法包括以下步骤:将衬底放置在沉积室中,向沉积室提供气体混合物,其中该气体混合物由一种或多种环状有机硅化合物,一种或多种脂族化合物以及一种或多种更多的氧化性气体。该方法还包括在电场的存在下使气体混合物反应以在半导体衬底上形成低介电常数膜。使用具有在大约20MHz至大约100MHz范围内的频率的非常高频的功率来产生电场。

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