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SOURCE-SIDE STACKING FAULT BODY-TIE FOR PARTIALLY-DEPLETED SOI MOSFET HYSTERESIS CONTROL
SOURCE-SIDE STACKING FAULT BODY-TIE FOR PARTIALLY-DEPLETED SOI MOSFET HYSTERESIS CONTROL
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机译：用于部分耗尽的SOI MOSFET滞回控制的源侧堆叠故障体
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摘要
Floating body effects are substantially reduced by strategically forming source-side stacking faults to create a leakage path from the body to the source of an SOI structure. Embodiments include ion implanting a heavy ion, such as Xe, to form a buried amorphous layer in the source-side of the silicon layer after source/drain implants followed by silicidation, during which the buried amorphous region recrystallizes creating source-side stacking faults.
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