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Memory device having memory cells with magnetic tunnel junction and tunnel junction in series
Memory device having memory cells with magnetic tunnel junction and tunnel junction in series
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机译：具有具有串联的磁性隧道结和隧道结的存储单元的存储器件
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摘要
A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.
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