Electron cyclotron resonance (ECR) plasma etching process and ECR plasma etching apparatus

• 1. 通过电子回旋共振（ECR）从气态介质产生沿轴线具有高范围的等离子体的设备 [P] . 中国专利： CN104620682B . 2017.09.05
• 2. 生成由在电子回旋共振（ECR）场中的微波能激发的等离子体以在丝状部件周围执行表面处理或产生涂层的方法和设备 [P] . 中国专利： CN106416430A . 2017-02-15
• 3. ELECTRON CYCLOTRON RESONANCE (ECR) PLASMA ETCHING PROCESS AND ECR PLASMA ETCHING APPARATUS [P] . 欧洲知识产权局专利： EP0407169A3 . 1991-09-11

  机译： 电子回旋共振（ECR）等离子体刻蚀过程和ECR等离子体刻蚀装置

• 4. Electron cyclotron resonance (ECR) plasma etching and ECR plasma etching equipment [P] . 韩国专利： KR910003768A . 1991-02-28

  机译： 电子回旋共振（ECR）等离子体蚀刻和ECR等离子体蚀刻设备

• 5. Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions [P] . 美国专利： US5279669A . 1994-01-18

  机译： 用于处理基板的等离子体反应器，包括用于引发电子回旋共振（ECR）和离子回旋共振（ICR）条件的装置

• 1. Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film [J] . 符斯列, 陈俊芳, 李赟, 等离子体科学和技术：英文版 . 2008,第001期
• 2. Correlation of Ⅲ/Ⅴ semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance [J] . Gerhard FRANZ, Ralf MEYER, Markus-Christian AMANN 等离子体科学和技术（英文版） . 2017,第012期
• 3. WET ETCHING STUDIES ON ELECTRON CYCLOTRON RESONANCE (ECR) PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED SILICON NITRIDE FILMS [C] . K. B. Sundaram, R. E. Sah, K. Balachandran International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada . 2000
• 4. Characterization of surface reaction during sulfur hexafluoride etching of silicon in an electron cyclotron resonance (ECR) plasma reactor. [D] . Huang, Yuan-Chang. 1994
• 5. Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications [O] . Ho-Kun Sung, Tian Qiang, Zhao Yao, -1
• 6. Processing Development and Surface Preparation Review. A Study of Reaction Products and Profile Evolution in Electron Cyclotron Resonance Plasma Etching of Poly-Si. [O] . Toshinobu BANJO, Kouichi ONO, Mutumi TUDA, 1996
• 7. Process Model and Complementary Experiments for the Electron Cyclotron Resonance(ECR) Technology: Application to Deposition and Etching. Phase II [R] . Meyyappan, M., Govindan, T. R., deJong, F., 1996

• 1. A Multi-Scale Study on Silicon-Oxide Etching Processes in C_4F_8/Ar Plasmas [J] . 眭佳星 ,张赛谦 ,刘增 . 等离子体科学与技术：英文版 . 2016,第6期
• 2. Dust Plasma Effect on the Etching Process of Si100 by Ultra Low Frequency RF Plasma [J] . Ahmed Rida Galaly ,Farouk Fahmi Elakshar . 现代物理（英文） . 2013,第2期
• 3. Characteristics of C_2 Radical in CHF_3 and CF_4 Electron Cyclotron Resonance Plasmas Studied by Optical Emission Spectroscopy [J] . 杜伟 ,叶超 ,程珊华 . 等离子体科学与技术：英文版 . 2002,第6期
• 4. 电子回旋共振(ECR)等离子体源的特性 [C] . 孙官清 ,刘仲阳 ,钏光武 . 第二届全国加速器技术学术交流会 . 1998
• 5. C4F8/Ar等离子体蚀刻蚀SiO2的多尺度研究 [A] . 眭佳星 . 2015