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Optical element and EUV lithography system
Optical element and EUV lithography system
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机译：光学元件和EUV光刻系统
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摘要
The invention relates to an optical element (1), comprising: a substrate (2), a multilayer system (3) applied to the substrate (2) and reflecting EUV radiation (4), and a protective layer system ( 5), which has a first layer (5a), a second layer (5b) and a third, in particular top layer (5c), the first layer (5a) being arranged closer to the multilayer system (3) than the second layer ( 5b) and wherein the second layer (5b) is arranged closer to the multilayer system (3) than the third layer (5c). The second layer (5b) and the third layer (5c) and preferably the first layer (5a) each have a thickness (d2, d3, d1) between 0.5 nm and 5.0 nm. The invention also relates to an EUV lithography system, comprising: at least one optical element which is designed as described above.
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